1)monocrystalline germanium鍺單晶
英文短句/例句
1.monocrystalline germaniumGB/T5238-1995鍺單晶
2.Monocrystalline germanium slicesGB/T15713-1995鍺單晶片
3.Germanium monocrystal--Inspection of dislocation etch pit densityGB/T5252-1985鍺單晶位錯腐蝕坑密度測量方法
4.Test method for resistivity of silicon and germanium bars using a two-point probeGB/T1551-1995硅、鍺單晶電阻率測定直流兩探針法
5.Test method for measuring resistivity of monocrystal silicon and germanium with a collinear four-probe arrayGB/T1552-1995硅、鍺單晶電阻率測定直排四探針法
6.The Study of Photics Character and Distribution Homogeneity of Ge in Ge-Doped CZSi Bulk Single Crystal;摻鍺CZSi單晶光學性質及鍺分布均勻性的研究
7."Some common intrinsic semiconductors are single crystals of silicon, germanium, and gallium arsenide."常用的本質半導體是硅、鍺以及砷化鎵等的單晶。
8." Designations for LiNbO3, LiTaO3, Bi12, GeO20, Bi12 SiO20 piezoelectric crystals"GB/T9532-1988鈮酸鋰、鉭酸鋰、鍺酸鉍、硅酸鉍壓電單晶材料型號命名方法
9.Collection of metallographs on defects of crystalline germaniumGB/T8756-1988鍺晶體缺陷圖譜
10.germanium-doped silica core single mode fiber摻鍺石英心單模光纖
11.Metal-Induced Crystallization of Amorphous Silicon and Silicon Germanium Films非晶硅和非晶硅鍺薄膜的金屬誘導結晶
12.germanium low frequency high power triode鍺低頻大功率晶體三極管
13.Growth and Calculation of Zinc Germanium Phosphide Crystals;磷化鍺鋅晶體的生長研究及理論計算
14.Selectively Grown SiGe and Metal-Induced Growth of Poly-SiGe Based on UHVCVD;基于UHVCVD的選擇性外延鍺硅與金屬誘導生長多晶鍺硅的研究
15.Experimental Investigation of Amorphous Chalcogenide Glass Films as a Holographic Storage Medium非晶形砷硫硒鍺薄膜用于全息存儲實驗研究
16.Research in Growth of Poly-Si_(1-x)Ge_x on SiO_2 by UHVCVD;利用UHV/CVD在SiO_2薄膜上生長多晶鍺硅薄膜的研究
17.Research on Nonlinear Property of Erbium Doped PCF and Germanium Doped PCF摻鉺及摻鍺光子晶體光纖非線性的研究
18.Influence of Substrate Temperature on the Growth of μc-SiGe Thin Film襯底溫度對氫化微晶硅鍺薄膜生長的影響
相關短句/例句
germanium monocrystalline鍺單晶體
3)SiGe bulk硅鍺單晶
1.The distribution of impurity Ge in SiGe bulk single crystal which was grown by varying speed CZ was measured by using the SEM-EDS methods, and it was found that the Ge concentration varied from a lower value at head to a highter one at the tail of Si crystal which was doped Ge.利用掃描電鏡能譜分析法,對 CZ 法生長的摻鍺濃度不同的硅鍺單晶中鍺濃度進行了測定,結果發現硅中鍺的縱向分布是頭部濃度較低,尾部鍺濃度較高。
4)single crystal of germanium鍺單晶<冶>
5)single crystal germanium單晶鍺
6)SiGe single crystal鍺硅單晶
延伸閱讀
鍺單晶分子式：GeCAS號：性質：周期表IV族元素半導體。共價鍵結合，金剛石型結構。晶胞由兩類不等價原子組成的兩個面心立方晶格套構而成，包胞中包含兩個不等價原子。為復式晶格。晶格常數0.56575nm。電子縱向和橫向有效慣性質量m分別為1.64和0.0819。重空穴和輕空穴的有效慣性質量為0.36和0.04，為間接帶隙半導體。室溫禁帶寬度0.67eV。本征載流子濃度2.4×1019/m3。純晶體的電子和空穴遷移率趴39m2(V·s)和0.19m2(V·s)。摻入III和V族原子可制成p型或n型材料。采用區熔法提純晶體。用直接法制備單晶。為制作高頻、低噪聲半導體器件的優良材料。
