1)mercury indium telluride碲銦汞
1.Preparation and thermal stability of mercury indium telluride single crystals碲銦汞晶體制備及其熱穩定性研究
2.The polycrystalline material of mercury indium telluride(MIT) was synthesized through a direct reaction between high purity Hg,In and Te.以高純Hg,In,Te單質為原料,通過元素直接化合反應合成了碲銦汞(MIT)多晶料,并利用合成的高純多晶料,在特殊設計的坩堝中,采用垂直Bridgman法通過自發成核方式成功地生長了尺寸為Φ15 mm×175 mm的MIT單晶體。
2)indium telluride碲化銦
3)HgCdTe碲鎘汞
1.Morphology Study on HgCdTe Film Grown of MOVEP;氣相外延法生長碲鎘汞薄膜的形貌特性研究
2.Study on the Composition and Homogeneity Control of HgCdTe Crystal;碲鎘汞晶體組分及其均勻性控制研究
3.Effect of laser energy on annealing of ion implanted HgCdTe;激光能量對碲鎘汞注入樣品退火效果的影響
英文短句/例句
1.optically optimal tellurium-cadmium-mercury infrared detector光優型碲鎘汞紅外探測器
2.The Theoretical Analysis and Testing of HgCdTe Loophole P-N Junction;碲鎘汞環孔P-N結理論分析與測試
3.LONG-WAVE INFRARED 2048-ELEMENTS LINEAR HgCdTe FOCAL PLANE ARRAY長波紅外2048元線列碲鎘汞焦平面器件
4.SPECTRAL STUDY ON RESPONSE OF HgCdTe IR TWO-COLOR DETECTOR ARRAYS碲鎘汞紅外雙色探測器響應光譜研究
5.Study on the Microstructure of Hg1-xCdxTe Crystals by Scanning Electron Microscopy碲鎘汞晶體結構性質的電子顯微術研究
6.The Study of the Micro Dewar for Long Linear HgCdTe IRFPA長線列碲鎘汞紅外焦平面微型杜瓦的研究
7.Hydrogen Passivate HgCdTe: First-principle Study紅外碲鎘汞材料氫鈍化行為的第一性原理研究
8.Study of PV HgCdTe detector irriated by femtosecond pulse laser in infrared wave length飛秒紅外激光輻照PV型碲鎘汞探測器實驗研究
9.Developments of Wet and Dry Process Techniques for HgCdTe Detector Fabrication碲鎘汞探測器制備濕法和干法工藝的研究進展
10.Trends in Two-color Infrared Focal Plane Detectors of MCT雙色碲鎘汞紅外焦平面探測器發展現狀
11.Analysis of the Main Defects and Its′ Origin on HgCdTe Film Grown by LPE碲鎘汞液相外延薄膜典型缺陷及其起源分析
12.The measurement results for Hg Cd Te photodiodes are presented.文中列出了碲鎘汞光電二極管結電容的測量結果.
13.The microstructure of(Hg,Cd)Te crystal has been studied by analyticai EM.用分析電子顯微鏡觀察了碲鎘汞晶體的顯微結構。
14.Damage Mechanisms of Laser on PV-type Single Element HgCdTe Device and Visible-light CCD;單元光伏型碲鎘汞探測器及可見光CCD的激光損傷機理研究
15.Microstructures and Properties of Mercury Cadmium Telluride (HgCdTe) by Pulsed Laser Deposition (PLD)脈沖激光沉積(PLD)碲鎘汞(HgCdTe)薄膜材料結構特性的研究
16.Transient and permanent defects of HgCdTe photovoltaic detectors by γ irradiationγ輻射對碲鎘汞光伏探測器的暫態損傷與永久損傷
17.NEGATIVE PHOTOVOLTAIC-RESPONSES IN HgCdTe INFRARED PHOTOVOLTAIC DETECTORS IRRADIATED WITH PICOSECOND PULSED LASER皮秒脈沖激光照射下碲鎘汞光伏紅外探測器的負光伏響應新現象
18.Electro-optical characteristics of arsenic-doped base region long-wavelength HgCdTe n-on-p photodiode detector砷摻雜基區n-on-p長波光伏碲鎘汞探測器的光電特性
相關短句/例句
indium telluride碲化銦
3)HgCdTe碲鎘汞
1.Morphology Study on HgCdTe Film Grown of MOVEP;氣相外延法生長碲鎘汞薄膜的形貌特性研究
2.Study on the Composition and Homogeneity Control of HgCdTe Crystal;碲鎘汞晶體組分及其均勻性控制研究
3.Effect of laser energy on annealing of ion implanted HgCdTe;激光能量對碲鎘汞注入樣品退火效果的影響
4)MCT碲鎘汞
1.Magnetic-field Effect MCT Crystal Composition Distribution;磁場對布里茲曼法碲鎘汞晶體組分分布的作用
2.The In Bump Growth on the Large Scale MCT IR Device;新型大面陣碲鎘汞探測器In柱生長工藝研究
3.Study low frequency noise of MCT MW photoconductive detectors by changing background radiation;改變背景輻射研究碲鎘汞中波光導探測器低頻噪聲
5)HgCdTe(MCT)碲鎘汞(MCT)
6)mercury telluride碲化汞
延伸閱讀
碲化銦分子式:InTeCAS號:性質:黑色或藍灰色結晶物。四方晶結構,為層狀晶。密度6.29g/cm3。熔點696℃。空氣中穩定,難溶于鹽酸,可溶于硝酸。真空中加熱易揮發,蒸氣穩定不分解。具有強的各向異性和金屬導電性質。由銦和碲直接反應制取。10K時轉變為超導體。